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IGBT Chips

2025-11-10

     
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Product Model: TI120FESB9S0
Rated Voltage: 1200V
Rated Current: 200A
Chip Generation: 6thRTMOS

Features

  ● Embedded emitter trench gate, soft pass through

  ● Low pass-state loss

  ● Low switching loss

  ● Easy to use in parallel

  ● Tvjmax=175°C

TI120FESB9S0 Ver 22.12

 
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