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IGBT Chip

2025-11-10

     
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Product Model: TI075FESBAS2
Rated Voltage: 750V
Rated Current: 315A
Chip Generation: 6thRTMOS

Features

● Embedded emitter trench gate, soft pass through

● Low pass-state loss

● Low switching loss

● Easy to use in parallel

● Tvjmax=175°C

TI075FESBAS2 Ver 23.02

 
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